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IEC 60747-8-4*CEI 60747-8-4

Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications

Số trang: 130
Ngày phát hành: 2004-09-00

Liên hệ
Gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes: type B depletion (normally on) type and Type C enhancement (normally off) type.
Số hiệu tiêu chuẩn
IEC 60747-8-4*CEI 60747-8-4
Tên tiêu chuẩn
Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
Ngày phát hành
2004-09-00
Trạng thái
Có hiệu lực
Tiêu chuẩn tương đương
BS IEC 60747-8-4 (2004-11-09), IDT * NEN-IEC 60747-8-4:2004 en;fr (2004-11-01), IDT
Tiêu chuẩn liên quan
IEC 60747-1 (1983) * IEC 60747-2 (2000-03) * IEC 60747-8 (2000-12)
Thay thế cho
IEC 47E/259/FDIS (2004-05)
Thay thế bằng
Lịch sử ban hành
IEC 60747-8-4*CEI 60747-8-4*IEC 47E/259/FDIS (2004-05) * IEC 60747-8-4 (2004-09) * IEC 47E/259/FDIS (2004-05) * IEC 47E/235/CDV (2002-12)
Từ khóa
Acceptance * Assemblies * Circuit-breakers * Class * Components * Definitions * Detail specification * Discrete devices * Drain current * Electrical engineering * Electronic engineering * Electronic equipment and components * Field-effect transistors * Inspection * Limits (mathematics) * Measurement * Measuring techniques * Mechanical properties * Metal oxide semiconductors * Metallic oxides * Oxide coatings * Properties * Ratings * Reliability * Semiconductor devices * Semiconductors * Specification (approval) * Symbols * Testing * Transistors * Types * Reception
Mục phân loại
Số trang
130